Semiconductor memory device having full depletive type logic transistors and partial depletion type memory transistors

ABSTRACT

A semiconductor device includes a semiconductor substrate, an insulating layer, a silicon layer, full depletion type transistors, and partial depletion type transistors. The insulating layer is formed on the Semiconductor substrate. The silicon layer has a first region and a second region. The silicon layer is formed on the insulating layer. The full depletion type transistors are used for a logical circuit, and are formed on the silicon layer at the first region. The partial depletion type transistors are used for a memory cell circuit and are formed on the silicon layer at he second region. The second region of the silicon layer is maintained at a fixed potential.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a semiconductor device and a method offabricating the same.

This application is a counterpart application of Japanese applicationSerial Number 313593/2001, filed Oct. 11, 2001, the subject matter ofwhich is incorporated herein by reference.

2. Description of the Related Art

There has been growing attention to be paid to a silicon ON Insulator(hereinafter referred to as an SOI) during the development of atomorrow's LSI which operates at a low voltage with low powerconsumption. The SOI technique is a technique for forming elements suchas transistors on a silicon layer formed on a insulating layer. Thesemiconductor device fabricated using this technique has an advantagethat it operates at a low voltage with low power consumption. For anapplication using the current SOI technique, a logical product mainlymounting thereon a CMOS and the like is a mainstream, and hence the SOItechnique is not frequently applied to a family of memory productsincluding a DRAM. However, there is a demand of low voltage with lowpower consumption even for memories. It has been gradually difficult tofabricate memories which operate at a low voltage with low powerconsumption compared with current memories using a conventional bulktype transistor for forming elements such as a transistor on a siliconsubstrate. Accordingly, the application of the SOI technique to memorieshas been studied.

A method of fabricating a full depletion type semiconductor devicehaving a conventional SOI structure is described with reference to FIG.4(A) to FIG. 4(E).

Firstly, an embedded oxide film layer 20 having a thickness on the orderof 1000 to 2000 Å is formed on a silicon substrate 10, and a siliconlayer 30 having a thickness on the order of 500 to 1000 Å is formed onthe embedded oxide film layer 20, as shown in FIG. 4(A).

Secondly, a pad oxide film 35 having a thickness on the order of 50 to200 Å is formed on the silicon layer 30, and nitride films 36 eachhaving a thickness on the order of 500 to 3000 Å and having openings ona field oxide film formation region are formed on a remaining pad oxidefilm 35 using a normal photolithography/etching technique, as shown inFIG. 4(B).

Thirdly, the silicon layer 30 is subjected to a thermal oxidation usingthe nitride films 36 serving as a mask so as to form field oxide films40 each having a thickness (on the order of 1000 to 2000 Å) to reach theembedded oxide film layer 20. Thereafter, the remaining nitride films 36and the remaining pad oxide film 35 are respectively removed to form ashape, as shown in FIG. 4(C).

Fourthly, the silicon layer 30 which are separated in elements(hereinafter referred to as elementally separated) is doped with animpurity so as to render the silicon layer 30 formed on the transistorformation region conductive, as shown in FIG. 4(D).

Lastly, a gate oxide film 50 is formed on the silicon layer 30 on thetransistor formation region, then gate electrodes 60 are formed on thegate oxide film 50 using a normal photolithography technique and etchingtechnique. Further, the silicon layer 30 is doped with an impurity usingthe gate electrodes 60 serving as a mask, thereby forming a source anddrain region 71 of the transistor. As a result, the semiconductor deviceusing the SOI technique is accomplished, as shown in FIG. 4(E).

However, if the forgoing transistor is applied to a transfer gate of amemory cell, electric charges are prone to accumulate in a region undera gate electrode of the transistor (hereinafter referred to as a bodyregion). As a result, there is a likelihood that a source and a drain ofthe transistor are electrically connected to each other by accumulatedelectric charges even if no voltage is applied to the gate electrode ofthe transistor. Under such circumstances, electric charges stored in acapacitor connected to the transistor leak, and hence data stored in thememory cell is destroyed.

Although a threshold value (hereinafter referred to as threshold voltageVt) of a gate voltage of the SOI transistor is of the order of 1.0 to1.2 volt, there is a possibility that the threshold voltage Vt becomesnot more than 0.7 volt owing to electric charges accumulated in a bodyregion of the transistor. Under such circumstances, the source and thedrain are electrically connected to each other, as set forth above, andhence there occurs a phenomenon of a pass gate leakage (sub-thresholdleakage) where electric charges accumulated in a capacitor leak,resulting in the occurrence of possibility that data stored in thememory cell is destroyed.

SUMMARY OF THE INVENTION

To solve the forgoing problems, a semiconductor device of the inventionhas a first silicon layer and a second silicon layer respectively formedon a silicon substrate by way of an insulating layer. Full depletiontype transistors for use in a logical circuit are formed on the firstsilicon layer while partial depletion type transistors for use in amemory cell circuit are formed on the second silicon layer. Further, apotential of the second silicon layer is fixed at a fixed value.

Further, the semiconductor device is fabricated by forming the first andsecond silicon layers on the insulating layer, forming nitride filmpatterns on the first and second silicon layers, forming a first elementseparation film contacting the insulating layer for elementallyseparating the first silicon layer by subjecting the first and secondsilicon layers to oxidation using the nitride film patterns serving as amask, forming a second element separation film on the insulating layerby way of the second silicon layer for elementally separating the secondsilicon layer, removing the nitride film patterns, forming fulldepletion type transistors on the first silicon layer and formingpartial depletion type transistors on the second silicon layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a semiconductor device according to afirst embodiment of the invention;

FIG. 2 is a sectional view showing a method of fabricating asemiconductor device according to a second embodiment of the invention;

FIG. 3 is a sectional view showing a method of fabricating asemiconductor device according to a third embodiment of the invention;and

FIG. 4 is a sectional view showing a conventional semiconductor deviceand a method of fabricating the same.

PREFERED ENBODIMENT OF THE INVENTION

First Embodiment

FIG. 1 is a sectional view of a semiconductor device according to afirst embodiment of the invention. The first embodiment of the inventionis described with reference to FIG. 1.

With the semiconductor device according to the first embodiment of theinvention, there are provided full depletion type transistors for use ina logical circuit on a region A of an SOI substrate, and partialdepletion type transistors for use in a memory circuit on a region B.Further, a silicon layer 32 on which the partial depletion typetransistors are formed is fixed in potential.

The logical circuit used here is a circuit for executing fixedoperations relative to the combination of inputted logical values andoutputting the result of the operations. There are two types of logicalcircuits, first is a combinational logical circuit in which thecombination of the logical values to be outputted is determined only bythe combination of the logical values to be inputted, second is asequential logical circuit in which the combination of the logicalvalues to be outputted are also affected by a state of the logicalcircuit when the logical values are inputted. According to the firstembodiment, a circuit for operating data to be inputted to a memory anda circuit for operating data to be outputted from the memory arerespectively mounted as the logical circuit. Meanwhile, a DRAM, an SRAM,a flash memory and the like can be mounted as the memory circuit.

The SOI substrate has an embedded oxide film layer 20 provided on thesilicon substrate 10 while a silicon layer 31 and another silicon layer32 provided on the embedded oxide film layer 20. The SOI substrate alsohas a first field oxide film 41 which is in contact with the embeddedoxide film layer 20 and elementally separates the silicon layer 31, anda second field oxide film 42 which does not reach the embedded oxidefilm layer 20 and elementally separates the silicon layer 32.Transistors are formed on the silicon layer 31 and the silicon layer 32which are respectively elementally separated by the first field oxidefilm 41 and the second field oxide film 42. Each transistor has a gateoxide film 50 formed on the silicon layer 31 or silicon layer 32 and agate electrode 60 formed on the gate oxide film 50, and also has asource and drain region 71 and a channel region 72 provided on thesilicon layer 31 and silicon layer 32. The thickness of the siliconlayer 32 is larger than that of the silicon layer 31. The gate electrode60, the first and second field oxide films 41, 42 are covered with aninterlayer insulating film 80 formed of a BPSG (boron phosphorussilicate glass) and SiO2. Further, the source and drain region 71 of thetransistors formed on the silicon layer 32 is electrically connected toa capacitor, not shown, corresponding to the source or drain.

Further, a contact 90, which penetrates the interlayer insulating film80, contacts the surface of the silicon layer 32, and made ofpoly-silicon or tungsten, is provided so as to fix the potential of thesilicon layer 32. A high concentration layer 33 is doped with aconductive impurity which is the same as the silicon layer 32 at theportion where the contact 90 contacts the silicon layer 32 atconcentration higher than that of the impurity of the silicon layer 32.The diameter of the contact 90 is of the order of 0.3 to 0.4 μm. Thecontact 90 is formed on the surface of the interlayer insulating film 80and made of aluminum or copper. Further, the contact 90 is connected toan upper layer wiring 95 which is grounded or connected to a constantpotential source so that the potential of the silicon layer 32 is fixedat a fixed value.

With the semiconductor device according to the first embodiment of theinvention, since the second field oxide film 42 does not reach theembedded oxide film layer 20, respective partial depletion typetransistors formed on the silicon layer 32 are electrically connected toeach other on a body region (a region under the channel region). Thatis, the potential of the body region is fixed by a well contact (he bodyregion is electrically connected to a constant voltage source).Accordingly, the electric charges are not accumulated in the body regionof the transistors formed on the silicon layer 32. As a result, theredoes not occur a case where the source and drain of each transistorformed on the silicon layer 32 are electrically connected to each otherby the accumulated electric charges even if no voltage is applied to thegate of the transistor formed on the silicon layer 32. Accordingly,there does not occur a pass gate leakage (a phenomenon where electriccharges stored in a capacitor of a memory leak by way of a transfergate), so that there is an advantage that information stored in thememory cell can be held with certainty.

Meanwhile, the first field oxide film 41 reaches the embedded oxide filmlayer 20 so as to completely elementally separating the silicon layer31. Further, the transistors formed on the silicon layer 31 are fulldepletion type transistors to be used in a logical circuit. Accordingly,the threshold voltage Vt of the transistor can be set at a value lowerthan that of the partial depletion type transistors so that thetransistors can be operated at a low voltage. That is, the advantage ofthe transistor using the conventional SOI technique is not lost.

In order to prevent the pass gate leakage, in cases where the source anddrain region 71 of the transistor is a conductive N-type and thethreshold value of the gate voltage thereof is of the order of 1.0 to1.2 V, the potential of the silicon layer 32 in the vicinity of theembedded oxide film layer 20 may be kept at not more than 0 V bygrounding the silicon layer 32 or connecting the silicon layer 32 to aconstant potential source.

Further, although not illustrated, the silicon layer 31 and the siliconlayer 32 are spaced from each other and a peripheral circuit may bedisposed therebetween.

If the high concentration layer 33 is formed in a wider range so as tocontact the embedded oxide film layer 20, the electric chargesaccumulated in the body region can be efficiently escaped through thecontact 90 because the high concentration layer 33 is low in resistancecompared with the peripheral layers.

Second Embodiment

FIG. 2(A) to FIG. 2(G) are sectional views showing steps of fabricatinga semiconductor device according to a second embodiment of theinvention. The second embodiment of the invention is described withreference to FIG. 2(A) to FIG. 2(G). The second embodiment is a methodof fabricating the semiconductor device as set forth in the firstembodiment of the invention.

Firstly, an embedded oxide film layer 20 having a thickness on the orderof 1000 to 2000 Å, then a silicon layer 30 having a thickness on theorder of 2000 to 4000 Å are sequentially formed on a silicon substrate10, as shown in FIG. 2(A).

Secondly, a first pad oxide film 25 having a thickness on the order of50 to 200 Å is formed on the silicon layer 30, and a first nitride film26 having a thickness on the order of 500 to 3000 is formed on the firstpad oxide film 25, thereby obtaining the shape as shown in FIG. 2(B).

Thirdly, a part of the silicon layer 30 is etched using a normal etchingtechnique and also using the first pad oxide film 25 and the firstnitride film 26 serving as a mask. The silicon layer 30 has a portionwhich is etched along the boundary depicted by the dotted line A-A′ anda portion which is not etched. The portion which is etched becomes thesilicon layer 31 while the portion which is not etched becomes thesilicon layer 32. The silicon layer 31 at the left side of the line A-A′in FIG. 2(C) is a portion where full depletion type transistors areformed by the later steps while the silicon layer 32 at the right sideof the line A-A′ in FIG. 2(C) is a portion where partial depletion typetransistors are formed by the later steps. Then, the first pad oxidefilm 25 and the first nitride film 26 are removed. As a result, thesilicon layer 32 and the silicon layer 31 which is thinner than thesilicon layer 32 are respectively formed on the embedded oxide filmlayer 20, thereby obtaining the shape as shown in FIG. 2(C).

Subsequently, a second oxide film 35 on the order of 50 to 200 Å isformed on the silicon layer 31 and the silicon layer 32, then a secondnitride film 36 on the order of 500 to 3000 Å is formed on the pad oxidefilm 35, thereby obtaining the shape as shown in FIG. 2(D).

Then, both the silicon layer 31 and the silicon layer 32 are subjectedto a thermal oxidation using the nitride film 36 serving as a mask. Bythe thermal oxidation, a part of the silicon layer 31 becomes a firstfield oxide film 41 having a thickness to reach the embedded oxide filmlayer 20 while a part of the silicon layer 32 becomes a second fieldoxide film 42 not to reach the embedded oxide film layer 20. Thereafter,both the second nitride film 36 and the second pad oxide film 35 areremoved. Accordingly, the silicon layer 31 is elementally separated bythe first field oxide film 41 while the silicon layer 32 is elementallyseparated by the second field oxide film 42, thereby obtaining the shapeshown in FIG. 2(E).

Subsequently, the silicon layers 31, 32 which are respectivelyelementally separated by the first field oxide films 41, 42 arerespectively doped with impurities as shown in FIG. 2(F). Theconcentration of impurity to be doped at this time is of the order of1×10¹²˜1×10¹³ cm⁻² if each channel forms a p-type transistor.

Finally, a gate oxide film 50 is formed on the silicon layer 31 and thesilicon layer 32, then a gate electrode 60 made of poly-silicon isformed on the gate oxide film 50, while when the silicon layer 31 andthe silicon layer 32 are doped with the impurities using the gateelectrode 60 serving as a mask, a source and drain region 71 and achannel region 72 of the transistor are formed. At this time, thetransistor is not formed on a part of the silicon layer 32 which iselementally separated by the second field oxide film 42. However, a highconcentration layer 33 having a region with high concentration in animpurity on the order of 1×10¹⁵˜1×10¹⁵ cm⁻² is formed on the siliconlayer 32 on which the transistor is not formed. After forming thetransistors, an interlayer insulating film 80 made of BPSG or SiO₂ isformed on the gate electrode 60 or the first and second field oxidefilms 41, 42. A contact 90 which is electrically connected to thesilicon layer 32 and made of poly-silicon or tungsten is formed on thesilicon layer 32, on which the transistor is not formed, by penetratingthe interlayer insulating film 80. The contact 90 has a diameter on theorder of 0.3 to 0.4 μm. An upper layer wiring 95 made of aluminum orcopper is formed on the surface of the interlayer insulating film 80.The potential of the upper layer wiring 95 is grounded or connected to aconstant potential source, thereby always keeping its potential at notmore than 0V.

As mentioned in detail above, the semiconductor device according to thefirst embodiment of the invention is accomplished while it has thetransistor formed on elementally separated silicon layer 31 and thetransistor and the contact formed on the elementally separated siliconlayer 32, as shown in FIG. 2(G).

The semiconductor device according to the first embodiment which isfabricated according to the method of the second embodiment has thesilicon layer 32 having a thickness larger than that of the siliconlayer 31, thereby obtaining an advantage that a well contact is easilymade on the transistor formed on the silicon layer 32.

The region where full depletion type transistors are formed and theregion where partial depletion type transistors are formed can besimultaneously elementally separated from each other by forming thefirst field oxide film 41 and second field oxide film 42 each having thesame thickness at one step.

Meanwhile, if the high concentration layer 33 is formed in a wider rageso as to contact the embedded oxide film layer 20, the electric chargesaccumulated in the body region can be efficiently escaped through thecontact 90 because the high concentration layer 33 is low in resistancecompared with the peripheral layers. Particularly, the embedded oxidefilm layer 20 is positioned under the silicon layer 32 according to theinvention. Accordingly, it is possible to prevent ion, with which thesilicon layer 32 is doped from being excessively diffused downward so asto form the high concentration layer 33. As a result, it is possible toform the high concentration layer 33 in a wider range so as to contactthe embedded oxide film layer 20 with ease.

Third Embodiment:

FIG. 3(A) to FIG. 3(E) are sectional views showing a third embodiment ofthe invention. The third embodiment of the invention is described withreference to FIG. 3(A) to FIG. 3(E). The third embodiment of theinvention corresponds to the second embodiment of the invention which isthe method of fabricating the semiconductor device of the firstembodiment of the invention, and it is the modification of the secondembodiment.

Firstly, an embedded oxide film layer 20 having a thickness on the orderof 1000 to 2000 Å, then a silicon layer 30 having a thickness on theorder of 2000 to 4000 Åare respectively formed on a silicon substrate 10as shown in FIG. 3(A). This step is the same of that of the secondembodiment.

Secondly, a resist 12 is selectively formed on the surface of thesilicon layer 30, as shown in FIG. 3(B), and the silicon layer 30 isdoped with Ar using the resist 12 serving as a mask under the conditionof an acceleration electric field on the order of 10 to 30 KeV, withdensity on the order of 1×10¹⁴˜1×10¹⁵ cm⁻². B or P can be selectedinstead of Ar.

Thirdly, the resist 12 is removed, and a thermal oxide film 16 having athickness on the order of 2000 to 5000 Å is formed on the silicon layer30. At this time, the thermal oxide film 16 grows faster at a regiondoped with an impurity than at a region not doped with the impurityowing to growth speed diffusion effect. As a result, the thermal oxidefilm 16 has a shape as shown in FIG. 3(C).

Fourthly, the thermal oxide film 16 is removed so that a silicon layer32 and a silicon layer 31 which is thinner than the silicon layer 32 arerespectively formed on the embedded oxide film layer 20, therebyobtaining a shape as shown in FIG. 3(D).

The subsequent steps are the same as those shown in FIG. 2(D) to FIG.2(G) of the second embodiment of the invention. Finally, thesemiconductor device as shown in FIG. 3(E) is obtained in the same wayas the second embodiment of the invention.

The third embodiment of the invention obtains the same advantage as thesecond embodiment. Further, it is not necessary to form the first padoxide film 25 in the second embodiment, so that the steps can be reducedor simplified compared with those of the second embodiment.

As explained in detail above, according to the semiconductor device ofthe invention, the partial depletion type transistors formed on thesecond silicon layer are used for a memory circuit. The transistorsformed on the second silicon layer are electrically connected to eachother at the body region. Accordingly, there does not occur a pass gateleakage because a potential of the transistors formed on the secondsilicon layer can be fixed to the body region owing to the well contact.Accordingly, although the transistors are fabricated using an SOItechnique according to the invention, there is an advantage thatinformation of cell data can be held with certainty even if thetransistors are used for a transfer gate of a memory. The full depletiontype transistors formed on the first silicon layer are used for alogical circuit. The transistors formed on the first silicon layer areof full depletion type and they are completely elementally separatedwith each other. Accordingly, a threshold voltage Vt of the fulldepletion type transistors can be set at a value lower than the partialdepletion type transistor so that there is an advantage that thetransistor can operate at a low voltage. That is, the advantage of theconventional semiconductor device is not lost.

If the method of fabricating the semiconductor device according to theinvention is employed, the thickness of the second silicon layer becomeslarger than that of the first silicon layer, there is an advantage thata well contact can be easily made on the transistor formed on the secondsilicon layer.

1-24. (canceled)
 25. A semiconductor device comprising: a semiconductorsubstrate; an insulating layer formed on the semiconductor substrate; asilicon layer having a first region and a second region is formed on theinsulating layer; an element isolation layer formed on the siliconlayer, the element isolation layer completely isolating the siliconlayer within the first region and between the first region and thesecond region and partly isolating the silicon layer within the secondregion; a plurality of full depletion type transistors used for a firstcircuit each formed on the silicon layer at the first region; and aplurality of partial depletion type transistors used for a secondcircuit each formed on the silicon layer at the second region, thesilicon layer in the second region being applied with a predeterminedpotential.
 26. The semiconductor device according to claim 25, whereinthe thickness of the silicon layer at the second region is thicker thanthat of the silicon layer at the first region.
 27. The semiconductordevice according to claim 25, wherein the element isolation layer has afirst thickness in the first region so that the silicon layer in thefirst region is completely isolated, wherein the element isolation layerhas a second thickness between the first and second regions so that thesilicon layer in the first region is completely isolated from thesilicon layer in the second region, and wherein the element isolationlayer has a third thickness in the second region so that the siliconlayer in the second region is partly isolated.
 28. The semiconductordevice according to claim 27, wherein the first thickness is thickerthan a thickness of the silicon layer in the first region.
 29. Thesemiconductor device according to claim 27, wherein the second thicknessis thicker than a thickness of the silicon layer in the second region.30. The semiconductor device according to claim 27, wherein the thirdthickness is thinner than a thickness of the silicon layer in the secondregion.
 31. The semiconductor device according to claim 25, furthercomprising a constant potential source, wherein the silicon layer iselectrically connected to the constant potential source at the secondregion so that the silicon layer is kept at a fixed potential at thesecond region.
 32. The semiconductor device according to claim 31,further comprising a high concentration region formed on the siliconlayer at the second region, the high concentration region being dopedwith an impurity at concentration higher than the silicon layer, whereinthe silicon layer at the second region is connected to the constantpotential source through the high concentration region.
 33. Thesemiconductor device according to claim 25, wherein the silicon layer isa conductive P-type at the second region, while a threshold value of agate voltage of the partial depletion type transistor is of the order of1.0 to 1.2 V, and the silicon layer is grounded at the second region.34. A semiconductor device comprising: a semiconductor substrate; aninsulating layer formed on the semiconductor substrate; a first siliconlayer and a second silicon layer formed on the insulating layer; anelement isolation layer formed on the first and second silicon layers,the element isolation layer completely isolating the first silicon layerand partly isolating the second silicon layer; a plurality of fulldepletion type transistors used for a first circuit formed on the firstsilicon layer; and a plurality of partial depletion type transistorsused for a second circuit formed on the second silicon layer, whereinthe second silicon layer is fixed at a fixed potential.
 35. Thesemiconductor device according to claim 34, wherein the thickness of thesecond silicon layer is thicker than the first silicon layer.
 36. Thesemiconductor device according to claim 34, wherein the elementisolation layer includes a first element isolation film formed tocontact the insulating layer for elementally isolating the first siliconlayer into a plurality of first island regions; and a second elementisolation film formed on the second silicon layer for elementallyisolating the second silicon layer into a plurality of second islandregions.
 37. The semiconductor device according to claim 34, furthercomprising a constant potential source, wherein the second silicon layeris electrically connected to the constant potential so that the secondsilicon layer is kept at a fixed potential at the second region.
 38. Thesemiconductor device according to claim 37, further comprising a highconcentration region formed on the second silicon layer, the highconcentration region being doped with an impurity at concentrationhigher than the second silicon layer, wherein the second silicon layeris connected to the constant potential source through the highconcentration region.
 39. The semiconductor device according to claim38, wherein the second silicon layer is a conductive P-type, while athreshold value of a gate voltage of the partial depletion typetransistor is of the order of 1.0 to 1.2 V, and the second silicon layeris grounded.
 40. A semiconductor device comprising: a semiconductorsubstrate having an insulating layer formed thereon, the semiconductorsubstrate having a first area and a second area; a silicon layer formedon the insulating layer; an element isolation layer formed on thesilicon layer, the element isolation layer completely isolating thesilicon layer within the first area and between the first are and thesecond area and partly isolating the silicon layer within the secondarea; a plurality of fully depleted transistors formed on the siliconlayer in the first area, the fully depleted transistors being used for afirst circuit; a plurality of partially depleted transistors formed onthe silicon layer in the second area, the partially depleted transistorsbeing used for a second circuit; and a potential applying region formedon the silicon layer in the second area, the potential applying regionhaving a high concentration area for applying a predetermined potentialto the silicon layer, wherein the silicon layer of the potentialapplying region is connected to the silicon layer at which one of thepartially depleted transistors is formed.
 41. A semiconductor deviceaccording to claim 40, wherein the silicon layer at which the potentialapplying region is formed and the silicon layer at which one of thepartially depleted transistors is formed extends under a LOCOS layer.42. A semiconductor device according to claim 40, wherein the elementisolation layer is a LOCOS insulating layer.
 43. A semiconductor deviceaccording to claim 42, wherein the LOCOS layer in the first area iscontacted with the insulating layer and the LOCOS layer in the secondarea is formed on the silicon layer.
 44. The semiconductor deviceaccording to claim 40, wherein the potential applying region is aconductive P-type, while a threshold value of a gate voltage of thepartial depletion type transistor is of the order of 1.0 to 1.2 V, andthe silicon layer at the second area is grounded.